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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1469
DESCRIPTION *With TO-3 package *High breakdown voltage APPLICATIONS *For high voltage ,fast switching applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION
Absolute maximum ratings(Ta=25)
SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC25 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 10 4 100 200 -65~200 UNIT V V V A A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA ; IB=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VCE=400V; IB=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 15 8 MIN 400
2SC1469
TYP.
MAX
UNIT V
1.0 2.0 0.1 0.1 0.1 50
V V mA mA mA
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1469
Fig.2 Outline dimensions
3


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